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| N-CHANNEL 150V - 0.085 - 10A TO-220FP MESH OVERLAYTM POWER MOSFET TYPE STP30NS15LFP s s s STP30NS15LFP VDSS 150 V RDS(on) <0.1 ID 10 A TYPICAL RDS(on) = 0.085 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED DESCRIPTION Using the latest high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. 3 1 2 TO-220FP INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s SWITCHING "S" CAPACITOR ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM(*) Ptot EAS(1) dv/dt (2) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25C Drain Current (continuous) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor Single Pulse Avalanche Energy Peak Diode Recovery voltage slope Storage Temperature Operating Junction Temperature Value 150 150 15 10 7 40 30 0.2 300 2.4 -55 to 175 (1) Starting T j = 25 oC, ID = 15A, VDD= 75V (2) ISD 35A, di/dt 300A/s, VDD V(BR)DSS, Tj TJMAX. Unit V V V A A A W W/C mJ V/ns C (*) Pulse width limited by safe operating area. July 2003 . 1/9 STP30NS15LFP THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose Max Max Typ 5 62.5 300 C/W C/W C ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) OFF Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 A, VGS = 0 VDS = Max Rating VDS = Max Rating TC = 125C VGS = 15V Min. 150 1 10 100 Typ. Max. Unit V A A nA ON (1) Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS VGS = 10 V VGS = 5 V ID = 250 A ID = 5 A ID = 5 A Min. 1 Typ. 2 0.085 0.1 Max. 3 0.1 0.112 Unit V DYNAMIC Symbol gfs (*) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS = 20 V ID = 7 A Min. Typ. 6 1080 170 105 Max. Unit S pF pF pF VDS = 25V, f = 1 MHz, VGS = 0 2/9 STP30NS15LFP ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions ID = 5 A VDD = 75 V RG = 4.7 VGS = 4.5 V (Resistive Load, Figure 1) VDD=120V ID=10A VGS=5V (see test circuit, Figure 2) Min. Typ. 25 95 40 7.5 20 54 Max. Unit ns ns nC nC nC SWITCHING OFF Symbol td(off) tf tr(Voff) tf tc Parameter Turn-off Delay Time Fall Time Off-voltage Rise Time Fall Time Cross-over Time Test Conditions ID = 5 A VDD = 75 V RG = 4.7, VGS = 5 V (Resistive Load, Figure 1) ID = 10 A Vclamp = 120 V RG = 4.7, VGS = 4.5 V (Inductive Load, Figure 3) Min. Typ. 55 30 15 30 50 Max. Unit ns ns ns ns ns SOURCE DRAIN DIODE Symbol ISD ISDM (*) VSD (*) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 10 A VGS = 0 160 950 12 Test Conditions Min. Typ. Max. 10 40 1.3 Unit A A V ns nC A di/dt = 100A/s ISD = 10 A Vr = 30 V Tj = 150C (Inductive Load, Figure 3) (*)Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. (*)Pulse width limited by safe operating area. Safe Operating Area Thermal Impedance 3/9 STP30NS15LFP Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/9 STP30NS15LFP Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature Source-drain Diode Forward Characteristics Normalized Breakdown Voltage vs Temperature . . 5/9 STP30NS15LFP Fig. 1: Switching Times Test Circuits For Resistive Load Fig. 2: Gate Charge test Circuit Fig. 3: Test Circuit For Diode Recovery Behaviour 6/9 STP30NS15LFP TO-220FP MECHANICAL DATA DIM. MIN. A B D E F F1 F2 G G1 H L2 L3 L4 L6 L7 O 28.6 9.8 15.9 9 3 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 30.6 10.6 16.4 9.3 3.2 1.126 0.385 0.626 0.354 0.118 mm TYP. MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 A B L3 L6 L7 F1 D H F G1 E F2 123 L2 L4 G 7/9 STP30NS15LFP TO-220FP(023Y) MECHANICAL DATA mm. TYP inch TYP. DIM. A B C D E F F1 F2 G G1 H L1 L2 L3 L4 L5 L6 L7 L8 M N Dia MIN. 4.4 2.5 1 2.4 0.4 0.75 1.15 1.15 4.68 2.24 10 18.4 29 15.3 MAX. 4.6 2.7 1.4 2.75 0.7 1 1.7 1.7 5.48 2.84 10.4 19.2 30 16.1 MIN. 0.173 0.009 0.039 0.094 0.015 0.029 0.045 0.045 0.184 0.088 0.393 0.724 1.14 0.60 MAX. 0.181 0.106 0.055 0.108 0.027 0.039 0.066 0.066 0.215 0.111 0.409 0.755 1.18 0.63 16 0.629 3.4 15.9 9 22.5 4.6 2.29 3 16.4 9.3 23.6 5.4 3.29 3.2 0.625 0.354 0.885 0.181 0.090 0.133 0.665 0.366 0.929 0.212 0.129 8/9 STP30NS15LFP Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics (R) 2003 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 9/9 |
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